Search results for "Single Event Upset"

showing 10 items of 23 documents

Dynamic Test Methods for COTS SRAMs

2014

International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmos…

Pseudorandom number generatorsingle event upset (SEU)Nuclear and High Energy Physicsta114ta213Computer scienceCOTSneutrons65 nmmultiple cell upset (MCU)SRAMColumn (database)[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringElectronic engineering90 nmHeavy ionStatic random-access memoryElectrical and Electronic Engineeringheavy ionsNeutron irradiationWord (computer architecture)dynamic testDynamic testingIEEE Transactions on Nuclear Science
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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

2015

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation
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From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

2008

The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key dete…

Nuclear and High Energy PhysicsEngineeringbusiness.industryDetectorOn boardRadiation testingNuclear Energy and EngineeringSingle event upsetCalibrationKey (cryptography)Electronic engineeringSatelliteStatic random-access memoryElectrical and Electronic EngineeringbusinessComputer hardwareIEEE Transactions on Nuclear Science
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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

2016

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

ImaginationNuclear and High Energy PhysicsHeavy ion radiationMaterials science130 nmmedia_common.quotation_subject[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesFluence[SPI]Engineering Sciences [physics]0103 physical sciencesStatic testingSensitivity (control systems)Electrical and Electronic Engineeringradiation testingSimulationmedia_common010302 applied physicssingle event upset (SEU)ta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)FerroelectricityNon-volatile memoryRadiation testingFRAM130nm technologyNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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High-Energy Electron-Induced SEUs and Jovian Environment Impact

2017

We present experimental evidence of electron-induced upsets in a reference European Space Agency (ESA) single event upset (SEU) monitor, induced by a 200-MeV electron beam at the Very energetic Electronic facility for Space Planetary Exploration in harsh Radiation environments facility at CERN. Comparison of experimental cross sections and simulated cross sections is shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons, flash effects, and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. The ESA Jupiter Icy Moons Explorer mission, to be launched in 2022, presents a challenging radiat…

Nuclear and High Energy Physics02 engineering and technologyRadiationspace technologyelektronit01 natural sciencesUpsetJovianNuclear physicsJupitersymbols.namesakeradiation physics0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectrical and Electronic EngineeringavaruustekniikkaPhysicsSpacecraftta114010308 nuclear & particles physicsbusiness.industryionising radiationionisoiva säteilyelectrons020202 computer hardware & architectureNuclear Energy and EngineeringsäteilyfysiikkaSingle event upsetVan Allen radiation beltPhysics::Space PhysicsElectromagnetic shieldingsymbolsAstrophysics::Earth and Planetary AstrophysicsAtomic physicsbusinessIEEE Transactions on Nuclear Science
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Effects of high-energy electrons in advanced NAND flash memories

2016

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

NeutronsHigh energyRadiationElectron energy010308 nuclear & particles physicsComputer sciencebusiness.industryNAND gateAlpha Particles; Flash; Neutrons; Radiation Effects; Single Event Upset; Electrical and Electronic Engineering; RadiationElectronAlpha Particles01 natural sciencesThreshold voltageRadiation EffectsFlash (photography)Error analysisAbsorbed dose0103 physical sciencesElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringFlashbusinessSingle Event Upset2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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TileCal optical multiplexer board 9U prototype

2007

This paper presents the architecture and the status of the optical multiplexer board (OMB) for the ATLAS/LHC Tile hadronic calorimeter (TileCal). This board will analyze the front-end data CRC to prevent bit and burst errors produced by radiation. Besides, due to its position within the data acquisition chain it will be used to emulate front-end data for tests. The first two prototypes of the final OMB 9U version have been produced at CERN. Detailed design issues and manufacture features of these prototypes are described. These prototypes are being validated whereas some firmware developments are being implemented in the programmable devices of the board. Functional descriptions of the boar…

ScheduleEngineeringLarge Hadron ColliderFirmwarebusiness.industrycomputer.software_genreMultiplexerData acquisitionSingle event upsetNuclear electronicsEmbedded systemField-programmable gate arraybusinesscomputer
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Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

2009

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Hardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateFlash memoryNon-volatile memoryFlash (photography)Single event upsetAbsorbed doseComputer data storageCharge pumpElectronic engineeringOptoelectronicsbusiness2009 European Conference on Radiation and Its Effects on Components and Systems
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A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing

2015

A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.

Computer sciencebitmap slicingParallel computingHardware_PERFORMANCEANDRELIABILITYRadiationSlicingUpsetElectronic mailSuperposition principleStatic random-access memoryMemoriesstatic testNuclear Experimentdynamic testta114ta213computer.file_formatSRAMBitmap[SPI.TRON]Engineering Sciences [physics]/ElectronicsMultiple Cell Upset (MCU)MCUSERBitmapradiation testevent accumulationSingle Event Upset (SEU)AlgorithmcomputerSEUTest data
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Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories

2010

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…

PhysicsNuclear and High Energy Physicsbusiness.industryNAND gateUpsetNon-volatile memoryFlash (photography)Nuclear Energy and EngineeringSingle event upsetAbsorbed doseCharge pumpElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessScalingIEEE Transactions on Nuclear Science
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